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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION *With TO-3PN package *Good linearity of hFE *Low collector saturation voltage APPLICATIONS *For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 125 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 20 30 6 2.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V 15 10 MIN 400 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT 2SC3850 TYP. MAX UNIT V 1.0 1.5 100 100 V V A A 15 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A IB1=-IB2=2A VCC=125V 1.0 2.5 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3850 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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